 | High Temperature, 1080 C (24" Hot
Zone: 126 Cubic In.)
| High Purity Quartz Tube with Water Cooled
End Caps.
| Broad Pressure Range of Atmosphere to
10-3 Torr.
| Upgradable to High Vacuum.
| Computer Interfaceable.
| Small Footprint (26" x 48"),
Portable with caster mounts.
| |
OPTIONS
| Burnbox / Scrubber.
| Plasma Enhancement.
| Ozone Generator.
| Safety Enclosures.
| |
TYPICAL APPLICATIONS
Depositions of Si3N4, Mo2S3, PBN, SiO2, Tungsten, BPSG, P-Si, Graphite, and many other chemistries.
INTRODUCTION
TEK-VAC's model CVD-300-M is an easy to use and ready to operate chemical vapor deposition system for use in a variety of thin film applications. The system has built in versatility the enhances its ability to accomodate many processes with excellent reproducibility. A compact footprint lends itself to restricted laboratory space without jeopardizing accessibility.
Uniform temperature profiles of +10 C are
maintained for an area of 3"dia. x 15". Fine temperature
regulation of the reactor region is achieved with the use of insulated
ceramic fiber, high wattage density heaters capable of rapid heat
up with minimal thermal losses. A thermocouple sensor, located
centrally in the hot zone, outputs to a digital temperature controller
complete with P.I.D. functions. Stepless control of the heating
elements is accomplished through the use of an SCR power pack.
Susceptor or substrate introduction is accomplished via an O-ring
sealed downstream port. All materials and wetted surfaces are
chemically cleaned and passivated to ensure a contaminant free
environment. Water cooled tube adaptors firmly grasp the quartz
reactor without stress, and effectively seal the reaction chamber
leak tight to a mass spectrometer leak detector.
Two mass flow controllers are supplied with the basic system to regulate the upstream gas flow into the reaction chamber. The flow controllers offer rapid response time and low hysteresis. Flow rates and flow corrections are front panel adjustable. Up to eight flow controllers can be incorporated by expansion of the existing stainless steel manifolding. Precise reactor pressure regulation is accomplished by a downstream throttle valve controlled by a capacitance manometer located in the reactor region.